Composite type composed of a low ON-resistance Nchannel MOSFET for ultrahigh-speed switching and low-voltage driving and a fast-recovery, low forward -voltage Schottky barrier diode. Facilitates highdensity mounting.
The FX853 is formed with 2 chips, one being equivalent to the 2SK1467 and the other the SB05-05P, placed in one package. Package Dimensions
unit:mm 2119
[FX853]
Electrical Connection
1:Gate 2:Source 3:No connection 4:Anode 5:Cathode 6:Drain (Top view)
1:Gate 2:Source.