Composite type composed of a ow ON-resistance Nchannel MOSFET for ultrahigh-speed switching and low-voltage driving and a fast-recovery, low forward -voltage Schottky barrier diode. Facilitates highdensity mounting.
The FX855 is formed with 2 chips, one being equivalent to the 2SK1470 and the other the SB0509, placed in one package. Package Dimensions
unit:mm 2119
[FX855]
Electrical Connection
1:Gate 2:Source 3:No connection 4:Anode 5:Cathode 6:Drain (Top view)
1:Gate 2:Source 3:N.