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K222 - 2SK222

Datasheet Summary

Features

  • Ultralow noise figure.
  • Large yfs.
  • Low gate leakage current. Package Dimensions unit:mm 2019B [2SK222] 5.0 4.0 4.0 0.6 2.0 14.0 5.0 0.45 0.5 0.45 0.44 Specifications 123 1.3 1.3 1 : Source 2 : Gate 3 : Drain SANYO : NP JEDEC : TO-92 EIAJ : SC-43 Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSS VGDS IG PD Tj Tstg Conditions Ratin.

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Datasheet Details

Part number K222
Manufacturer Sanyo Semicon Device
File Size 80.20 KB
Description 2SK222
Datasheet download datasheet K222 Datasheet
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Full PDF Text Transcription

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Ordering number:EN836G N-Channel Junction Silicon FET 2SK222 Low-Frequency, Low Noise Amplifier Applications Features · Ultralow noise figure. · Large yfs. · Low gate leakage current. Package Dimensions unit:mm 2019B [2SK222] 5.0 4.0 4.0 0.6 2.0 14.0 5.0 0.45 0.5 0.45 0.44 Specifications 123 1.3 1.
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