K2220 - Silicon N Channel MOS FET

Datasheet Summary

Features

High power gain.
Excellent frequency response.
High speed switching.
Wide area of safe operation.
Enhancement-mode.
Good complementary characteristics.
Equipped with gate protection diodes Outline REJ03G1004-0200 (Previous: ADE-208-1352) Rev.2.00 Sep 07, 2005.

Renesas

📥 Download Datasheet

Datasheet Details

Part number	K2220
Manufacturer	Renesas
File Size	57.44 KB
Description	Silicon N Channel MOS FET
Datasheet	K2220 Datasheet
Additional preview pages of the K2220 datasheet.

📁 Similar Datasheet

K2220 - 2SK2220 (Hitachi Semiconductor)
K222 - 2SK222 (Sanyo Semicon Device)
K2221 - 2SK2221 (Hitachi Semiconductor)
K2222 - N-Channel Transistor (ETC)
K2225 - 2SK2225 (Hitachi Semiconductor)
K2228 - Silicon N-Channel MOSFET (Toshiba)
K2229 - N-Channel MOSFET (Toshiba)
K222J15C0GF5xx - (K223xxxx) Leaded Ceramic Multilayer Capacitors (Vishay Intertechnology)
K222K15X7Rxxxx - (K223xxxx) Leaded Ceramic Multilayer Capacitors (Vishay Intertechnology)
K2200 - 2SK2200 (Toshiba Semiconductor)

Other Datasheets by Renesas

K2221 - Silicon N-Channel MOSFET
K2225 - High Speed Power Switching MOSFET

Full PDF Text Transcription

Click to expand full text

2SK2220, 2SK2221 Silicon N Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes Outline REJ03G1004-0200 (Previous: ADE-208-1352) Rev.2.00 Sep 07, 2005 RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1. Gate G 2. Source (Flange) 3. Drain 1 2 3 S Rev.2.00 Sep 07, 2005 page 1 of 5 2SK2220, 2SK2221 Absolute Maximum Ratings Item Drain to source voltage 2SK2220 2SK2221 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1.

Published: Jul 27, 2016 |