Part number:
K2220
Manufacturer:
File Size:
57.44 KB
Description:
Silicon n channel mos fet
Image | Manufacturer | B2B MPN | Description | Distributor | Stock | Quantity | Price | Buy Now |
---|---|---|---|---|---|---|---|---|
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Bourns Inc | ZV30K2220122NIR1 | VARISTOR 47V 1.2KA 2220 | DigiKey | 4000 | 10000 units |
$0.47
|
🛒 Buy Now |
K2220
57.44 KB
Silicon n channel mos fet
* High power gain
* Excellent frequency response
* High speed switching
* Wide area of safe operation
* Enhancement-mode
* Good complementary characteristics
* Equipped with gate protection diodes Outline REJ03G1004-0200 (Previous: ADE-208-135
📁 Related Datasheet
K222 - 2SK222
(Sanyo Semicon Device)
Ordering number:EN836G
N-Channel Junction Silicon FET
2SK222
Low-Frequency, Low Noise Amplifier Applications
Features
· Ultralow noise figure. · Lar.
K2220 - 2SK2220
(Hitachi Semiconductor)
2SK2220, 2SK2221
Silicon N-Channel MOS FET
Application
Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352
Features
• High power gain.
K2221 - Silicon N-Channel MOSFET
(Renesas)
2SK2220, 2SK2221
Silicon N Channel MOS FET
Application
Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352
Features
• High power gain.
K2221 - 2SK2221
(Hitachi Semiconductor)
2SK2220, 2SK2221
Silicon N-Channel MOS FET
Application
Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352
Features
• High power gain.
K2222 - N-Channel Transistor
(ETC)
.
K2225 - 2SK2225
(Hitachi Semiconductor)
2SK2225
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• High breakdown voltage (VDSS = 1500 V) • High speed switching • L.
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