Part number:
K2221
Manufacturer:
File Size:
57.44 KB
Description:
Silicon n-channel mosfet.
| Image | Manufacturer | B2B MPN | Description | Distributor | Stock | Quantity | Price | Buy Now |
|---|---|---|---|---|---|---|---|---|
 |
Anytek Technology Corporation Ltd | YK2221503000G | CONN BARRIER STRIP 15CIRC 0.25" | DigiKey | 0 | 1984 units |
$1.88
|
🛒 Buy Now |
K2221
57.44 KB
Silicon n-channel mosfet.
* High power gain
* Excellent frequency response
* High speed switching
* Wide area of safe operation
* Enhancement-mode
* Good complementary characteristics
* Equipped with gate protection diodes Outline REJ03G1004-0200 (Previous: ADE-208-135
📁 Related Datasheet
K222 - 2SK222
(Sanyo Semicon Device)
Ordering number:EN836G
N-Channel Junction Silicon FET
2SK222
Low-Frequency, Low Noise Amplifier Applications
Features
· Ultralow noise figure. · Lar.
K2220 - Silicon N Channel MOS FET
(Renesas)
2SK2220, 2SK2221
Silicon N Channel MOS FET
Application
Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352
Features
• High power gain.
K2220 - 2SK2220
(Hitachi Semiconductor)
2SK2220, 2SK2221
Silicon N-Channel MOS FET
Application
Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352
Features
• High power gain.
K2221 - 2SK2221
(Hitachi Semiconductor)
2SK2220, 2SK2221
Silicon N-Channel MOS FET
Application
Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352
Features
• High power gain.
K2222 - N-Channel Transistor
(ETC)
.
K2225 - 2SK2225
(Hitachi Semiconductor)
2SK2225
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• High breakdown voltage (VDSS = 1500 V) • High speed switching • L.
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