Ordering number:EN836G N-Channel Junction Silicon.
Hitachi Semiconductor
2SK2221 - Silicon N-Channel MOSFET
2SK2220, 2SK2221 Silicon N-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features • • • • • • • H.
Fuji Electric
2SK2224-01R - N-channel MOS-FET
2SK2224-01R FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarant.
Hitachi Semiconductor
K2221 - 2SK2221
2SK2220, 2SK2221 Silicon N-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features • High power gain.
Fuji Electric
2SK2223-01R - N-channel MOS-FET
2SK2223-01R FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarant.
Hitachi Semiconductor
2SK2225 - Silicon N-Channel MOSFET
2SK2225 Silicon N-Channel MOS FET ADE-208-140 1st. Edition Application High speed power switching Features • • • • • High breakdown voltage (VDSS =.
Fuji Electric
2SK2226-01L - N-channel MOS-FET
2SK2226-01L,S F-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel.
Toshiba Semiconductor
2SK2229 - Silicon N-Channel MOSFET
2SK2229 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2229 Chopper Regulator, DC−DC Converter and Motor Drive Application.
Renesas
2SK2221 - Silicon N-Channel MOSFET
2SK2220, 2SK2221 Silicon N Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features • High power gain.
Inchange Semiconductor
2SK2223-01 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor 2SK2223-01 DESCRIPTION ·Drain Current ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed .
Hitachi Semiconductor
K2225 - 2SK2225
2SK2225 Silicon N-Channel MOS FET Application High speed power switching Features • High breakdown voltage (VDSS = 1500 V) • High speed switching • L.
Sanyo Semicon Device
K222 - 2SK222
Ordering number:EN836G N-Channel Junction Silicon FET 2SK222 Low-Frequency, Low Noise Amplifier Applications Features · Ultralow noise figure. · Lar.
INCHANGE
2SK2221 - N-Channel MOSFET
isc N-Channel MOSFET Transistor INCHANGE Semiconductor 2SK2221 ·FEATURES ·Drain Current ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Sta.
Sanyo Semicon Device
2SK222 - N-Channel Junction Silicon FET
Ordering number:EN836G N-Channel Junction Silicon FET 2SK222 Low-Frequency, Low Noise Amplifier Applications Features · Ultralow noise figure. · Lar.
Hitachi Semiconductor
2SK2220 - Silicon N-Channel MOSFET
2SK2220, 2SK2221 Silicon N-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features • • • • • • • H.
Fuji Electric
2SK2226-01S - N-channel MOS-FET
2SK2226-01L,S F-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel.
Renesas
2SK2220 - Silicon N-Channel MOSFET
2SK2220, 2SK2221 Silicon N Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features • High power gain.
Hitachi Semiconductor
K2220 - 2SK2220
2SK2220, 2SK2221 Silicon N-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features • High power gain.
Inchange Semiconductor
2SK2224-01 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor 2SK2224-01 DESCRIPTION ·Drain Current ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·.
