2SK222 Datasheet | Specifications & PDF Download

2SK2225 Silicon N-Channel MOS FET Application High speed power switching Features • High breakdown voltage (VDSS = 1500 V) • High speed switching • L

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Ordering number:EN836G N-Channel Junction Silicon FET 2SK222 Low-Frequency, Low Noise Amplifier Applications Features · Ultralow noise figure. · Lar

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor 2SK2221 ·FEATURES ·Drain Current ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Sta

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isc N-Channel MOSFET Transistor 2SK2223-01 DESCRIPTION ·Drain Current ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed

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2SK2220, 2SK2221 Silicon N-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features • • • • • • • H

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2SK2225 Silicon N-Channel MOS FET ADE-208-140 1st. Edition Application High speed power switching Features • • • • • High breakdown voltage (VDSS =

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2SK2220, 2SK2221 Silicon N-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features • High power gain

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2SK2223-01R FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarant

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2SK2220, 2SK2221 Silicon N-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features • High power gain

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2SK2224-01R FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarant

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2SK2220, 2SK2221 Silicon N Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features • High power gain

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2SK2229 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2229 Chopper Regulator, DC−DC Converter and Motor Drive Application

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2SK2226-01L,S F-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel

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2SK2220, 2SK2221 Silicon N-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features • • • • • • • H

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2SK2226-01L,S F-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel

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Ordering number:EN836G N-Channel Junction Silicon FET 2SK222 Low-Frequency, Low Noise Amplifier Applications Features · Ultralow noise figure. · Lar

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isc N-Channel MOSFET Transistor 2SK2224-01 DESCRIPTION ·Drain Current ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·

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