Part number: 2SD2560
Manufacturer: SavantIC
File Size: 175.46KB
Download: 📄 Datasheet
Description: SILICON POWER TRANSISTOR
*Audio ,regulator and general purpose
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simp.
*With TO-3PN package
*Complement to type 2SB1647 APPLICATIONS
*Audio ,regulator and general purpose
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION
Absolute max.
Image gallery
TAGS
📁 Related Datasheet
2SD256 - Silicon NPN Power Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD256
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR) CEO= 40V(Min) ·Collector Po.
2SD2560 - NPN Transistor
(INCHANGE)
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min) ·High DC Current Gain-
: hFE= 5000.
2SD2560 - Silicon NPN Transistor
(Sanken electric)
2SD2560 Darlington
Equivalent circuit C B
(70Ω) E
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1647)
Application : Audio, S.
2SD2561 - NPN Transistor
(INCHANGE)
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min) ·High DC Current Gain-
: hFE= 500.
2SD2561 - Silicon NPN Transistor
(Sanken electric)
Equivalent circuit
C
Darlington
2SD2561
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=150V VEB=.
2SD2562 - Silicon NPN Darlington Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min) ·High DC Current Gain-
: hFE= 5000.
2SD2562 - Silicon NPN Transistor
(Sanken)
2SD2562 Darlington
Equivalent circuit C B
(70Ω) E
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1649)
Application : Audio, S.
2SD2565 - Silicon NPN Transistor
(Panasonic Semiconductor)
Transistor
2SD2565
Silicon NPN triple diffusion planer type
For high voltage-withstand switching
Unit: mm
6.9±0.1
0.15
1.05 2.5±0.1 ±0.05
(1.45) 0..
2SD2568 - Power Transistor
(Rohm)
2SD2568
Transistors
Power Transistor (400V, 0.5A)
2SD2568
zFeatures 1) High breakdown voltage.(BVCEO=400V)
zAbsolute maximum ratings (Ta=25°C)
Param.
2SD2500 - Silicon NPN Transistor
(Toshiba Semiconductor)
2SD2500
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SD2500
HORIZONTAL DEFLECTION OUTPUT COLOR TV
Unit: mm
l High Voltage
: VCBO = 15.
