* RDS(ON), VGS@10V, IDS@500mA=3
* RDS(ON), VGS@4.5V, IDS@200mA=4
* Advanced Trench Process Technology
* High Density Cell Design For Ultra Low On-Resistance
* Very Low Leakage Current In Off Condition
* Specially Designed for Battery Operated Systems, Solid-State Relays Dri
2N7002K
SeCoS
530.96 KB
N-channel mosfet.
Elektronische Bauelemente 2N7002K 0.3A , 60V , RDS(ON) 4 N-Ch Small Signal MOSFET with ESD Protection RoHS Compliant Product A suffix of “-C” spec.
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