* Symbol Dimensions In Millimeters Min 1.400 0.320 0.360 0.350 4.400 1.400 2.300 3.940 1.500TYP 2.900 0.900 3.100 1.100 Max 1.600 0.520 0.560 0.440 4.600 1.800 2.600 4.250 Min Dimensions In Inches Max 0.063 0.020 0.022 0.017 0.181 0.071 0.102 0.167 0.060TYP 0.114 0.035 0.122 0.043 Power dissipation
2SB1424
SeCoS
196.22 KB
Pnp silicon medium power transistor.
2SB1424
Elektronische Bauelemente
RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free
D D1 A
PNP Silicon Medium Power Transistor
.
📁 Related Datasheet
2SB1420 - Silicon PNP Transistor
(Sanken electric)
(2 k Ω) (80 Ω) E
Darlington
sAbsolute maximum ratings
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1420 –120 –120 –6 –16(Pulse–26) –1 80(Tc=25°C) 150 –5.
2SB1420 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min) ·High DC Current Gain-
: hFE= 20.
2SB1421 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -140V(Min) ·Wide Area of Safe Operation ·Complement to.
2SB1424 - PNP Transistor
(Rohm)
Transistors
2SB1424 / 2SA1585S
Low VCE(sat) Transistor (−20V, −3A)
2SB1424 / 2SA1585S
zFeatures 1) Low VCE(sat).
VCE(sat) = −0.2V (Typ.) (IC/IB = .
2SB1424 - Transistor
(GME)
Production specification
Low VCE(sat) Transistor(-20V,-3A)
FEATURES
Low VCE(SAT)=-0.2V(Typ.) (IC/IB=-2A/-0.1mA).
Pb
Lead-free
Excellent DC cur.
2SB1424 - PNP Transistor
(HOTTECH)
Plastic-Encapsulate Transistors
FEATURES
• Low VCE(SAT) =-0.2V(Typ.) (IC/IB=-2A/-0.1mA). • Excellent DC current gain characterisitics. • Complementar.
2SB1424 - PNP Transistor
(Power Silicon)
DATA SHEET
2SB1424
PNP GENERAL PURPOSE TRANSISTORS VOLTAGE -20 Volts CURRENT -3.0 Ampere
FEATURES
z PNP SILICON EPITAXIAL PLANAR TRANSISTOR FOR SWITC.
2SB1424 - Silicon PNP transistor
(BLUE ROCKET ELECTRONICS)
2SB1424
Rev.E Mar.-2016
DATA SHEET
/ Descriptions
SOT-89 PNP 。Silicon PNP transistor in a SOT-89 Plastic Package.
/ Features
，。 Low VCE(sat).
