BDY94 Datasheet, Device, Seme LAB

PDF File Details

Part number:

BDY94

Manufacturer:

Seme LAB

File Size:

11.29kb

Download:

📄 Datasheet

Description:

Bipolar npn device.

Datasheet Preview: BDY94 📥 Download PDF (11.29kb)

TAGS

BDY94
Bipolar
NPN
Device
Seme LAB

📁 Related Datasheet

BDY90 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 30-120@IC= 5A ·Excellent Safe Operating Area ·High Current Capability ·Min.

BDY90 - HIGH CURRENT NPN SILICON TRANSISTOR (STMicroelectronics)
BDY90 HIGH CURRENT NPN SILICON TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPE APPLICATIONS LINEAR AND EQUIPMENT SWITCHING INDUSTRIAL DESCRIPTION Th.

BDY90 - NPN SILICON TRANSISTOR (Seme LAB)
BDY90 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 0.97 (0.060) 1.10 (0.043) 22.23 (0.875) max. MECHANICAL DATA D.

BDY90A - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·High Current Capability ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·High Switching S.

BDY91 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 30-120@IC= 5A ·Excellent Safe Operating Area ·High Current Capability ·Min.

BDY92 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 30-120@IC= 5A ·Excellent Safe Operating Area ·High Current Capability ·Min.

BDY93 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 350V(Min) ·High Switching Speed ·Minimum Lot-to-Lot v.

BDY93 - Bipolar NPN Device (Seme LAB)
BDY93 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN .

BDY94 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·High Switching Speed ·Minimum Lot-to-Lot v.

BDY95 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) ·High Switching Speed ·Minimum Lot-to-Lot v.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts