BUL66B Datasheet (Seme LAB)

BUL66B, NPN Transistor

LAB MECHANICAL DATA Dimensions in mm 6.40 (0.252) 6.78 (0.267) 5.21 (0.205) 5.46 (0.215) SEME BUL66B 2.18 (0.086) 2.44 (0.096) 0.84 (0.033) 0.94 (0.037) ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING HIGH ENERGY RATING 1.09 (0.043) 1.30 (0.051) 5.97 (0.235) 6.22 (0.245) 1 2 3 0.76 (0.030) 1.14 (

BUL66B Features

* Multi

* base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. Pin 3

* Emitter 4.60 (0.181) Typ. 1.04 (0.041) 1.14 (0.045) I-PAK(TO251) Pin 1

* Base Pin 2

* Coll