Seme LAB manufacturer logo Part number: BUR21 Manufacturer: Seme LAB File Size: 11.83 KB Download: 📄 Datasheet Description: Bipolar npn device.
BUR20 Datasheet PDF BUR20, INCHANGE isc Silicon NPN Power Transistor DESCRIPTION ·High DC Current Gain-hFE=10(Min)@IC = 50A ·Low Saturation Voltage- VCE(sat)= 1.0V(Max)@ IC = 25A ·Minim.
BUR21 Datasheet PDF BUR21, INCHANGE isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V (Max.) @IC= 25A ·High Switching Speed ·High DC Curre.
BUR22 Datasheet PDF BUR22, INCHANGE isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V (Max.) @IC= 20A ·High Switching Speed ·High DC Curre.
BUR24 Datasheet PDF BUR24, Seme LAB BUR24 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN .
BUR50 Datasheet PDF BUR50, INCHANGE isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 125V(Min) ·High Current Capability ·Minimum Lot-to-.
BUR50 Datasheet PDF BUR50, Seme LAB BUR50 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN .
BUR51 Datasheet PDF BUR51, INCHANGE isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min) ·High Current Capability ·High Switching .
BUR51 Datasheet PDF BUR51, STMicroelectronics ® BUR51 HIGH CURRENT NPN SILICON TRANSISTOR s STMicroelectronics PREFERRED SALESTYPE s NPN TRANSISTOR DESCRIPTION The BUR51 is a silicon Multiepitax.
