* SIMPLIFIED AMPLIFIER DESIGN
* SUITABLE FOR BROAD BAND APPLICATIONS
* LOW Crss 1 .7 0 m ax. 10˚ m ax. 6 .7 6 .3 3 .1 2 .9 4 3 .7 7 .3 3 .3 6 .7
* SIMPLE BIAS CIRCUITS
* LOW NOISE (Typical < 2dB NF)
* HIGH GAIN
* 8dB MINIMUM
* SURFAC
D2282UK
Seme LAB
18.75 KB
Metal gate rf silicon fet.
TetraFET
LAB
MECHANICAL DATA Dimensions in mm.
0 .3 2 0 .2 4 0 .1 0 0 .0 2 16˚ m ax. 13˚
SEME
D2282UK
METAL GATE RF SILICON FET
GOLD METALLISED MU.
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D2201UK METAL GATE RF SILICON FET (Seme LAB)
