* HERMETICALLY SEALED TO
* 3 METAL PACKAGE 1 20.32 (0.800) 18.80 (0.740) dia. 7.87 (0.310) 6.99 (0.275) 1.78 (0.070) 1.52 (0.060) 11.18 (0.440) 10.67 (0.420) 26.67 (1.050) max. 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 2 100V 28A 0.077Ω
* SIMPLE DRIVE REQUIREMENTS
IRF140
Seme LAB
22.12 KB
N-channel power mosfet.
IRF140
MECHANICAL DATA Dimensions in mm (inches)
39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655)
N
*CHANNEL POWER .
📁 Related Datasheet
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• 28A and 25.
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IRF140
Data Sheet March 1999 File Number
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This N-Channel enhancement mode silicon gate power field .
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REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS THRU-HOLE -TO-3 (TO-204AE)
Product Summary
Part Number
BVDSS
IRF140
100V
RDS(on)
ID
0..
IRF140 - N-Channel Power MOSFET
(Fairchild Semiconductor)
.
IRF140 - N-Channel MOSFET Transistor
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isc N-Channel MOSFET Transistor
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: VDSS= 100V(Min) ·Static Drain-Source On-Resistance.
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isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRF1404，IIRF1404
·FEATURES ·Static drain-source on-resistance:
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IRF1404 - Power MOSFET
(International Rectifier)
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche R.
IRF1404L - Power MOSFET
(International Rectifier)
PD -93853C
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