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BUL76B NPN Transistor

BUL76B Description

LAB MECHANICAL DATA Dimensions in mm 10.2 1.3 4.5 SEME BUL76B ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR.

BUL76B Features

* Multi
* base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.
* Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
* Triple Gu

BUL76B Applications

* 6.3 3.6 Dia. 15.1 18.0 1 2 3 1.3 14.0 0.85

📥 Download Datasheet

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Datasheet Details

Part number
BUL76B
Manufacturer
Seme LAB
File Size
19.92 KB
Datasheet
BUL76B_SemeLAB.pdf
Description
NPN Transistor

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NPN Transistor Seme LAB
Seme LAB BUL76B-like datasheet