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HFH10N80 N-Channel MOSFET

HFH10N80 Description

HFH10N80 Dec 2005 HFH10N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ = 0.92 ȍ ID = 10 A .

HFH10N80 Features

* ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 58 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.92 ȍ (Typ. ) @VGS=10V ‰ 100% Avalanche Test

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Datasheet Details

Part number
HFH10N80
Manufacturer
SemiHow
File Size
208.62 KB
Datasheet
HFH10N80-SemiHow.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET SemiHow
SemiHow HFH10N80-like datasheet