HFH6N90 - N-Channel MOSFET

SemiHow

Datasheet Details

 Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 35 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 1.95 Ω (Typ. ) @VGS=10V  100% Avalanche Tested TO-3P 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current.

📁 HFH6N90 Similar Datasheet

HFH12N60 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
HFH20N50 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
HFH7N60 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
HFH9N90 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)

Other Datasheets by SemiHow

Published: Jun 7, 2015 |