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HFH6N90

N-Channel MOSFET

HFH6N90 Features

*  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 35 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 1.95 Ω (Typ.) @VGS=10V  100% Avalanche Test

HFH6N90 Datasheet (904.63 KB)

Preview of HFH6N90 PDF

Datasheet Details

Part number:

HFH6N90

Manufacturer:

SemiHow

File Size:

904.63 KB

Description:

N-channel mosfet.

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HFH6N90 N-Channel MOSFET SemiHow

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