HFH11N90 Datasheet, Mosfet, SemiHow

HFH11N90 Features

  • Mosfet ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate

PDF File Details

Part number:

HFH11N90

Manufacturer:

SemiHow

File Size:

189.49kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

Datasheet Preview: HFH11N90 📥 Download PDF (189.49kb)
Page 2 of HFH11N90 Page 3 of HFH11N90

TAGS

HFH11N90
N-Channel
MOSFET
SemiHow

📁 Related Datasheet

HFH10N80 - N-Channel MOSFET (SemiHow)
HFH10N80 Dec 2005 HFH10N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ = 0.92 ȍ ID = 10 A FEATURES ‰ Originative New Design ‰ Superior Avalanc.

HFH10N90Z - N-Channel MOSFET (SemiHow)
HFH10N90Z_HFA10N90Z Oct 2016 HFH10N90Z / HFA10N90Z 900V N-Channel MOSFET Features ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Techno.

HFH12N60 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
Shantou Huashan Electronic Devices Co.,Ltd. HFH12N60 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel e.

HFH13N80 - N-Channel MOSFET (SemiHow)
HFH13N80 Dec 2005 HFH13N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ = 0.77 Ω ID = 12.6 A FEATURES  Originative New Design  Superior Avala.

HFH18N50S - N-Channel MOSFET (SemiHow)
HFH18N50S Nov 2009 HFH18N50S 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ = 0.220ȍ ID = 19 A FEATURES ‰ Originative New Design ‰ Superior Avala.

HFH19N60 - N-Channel MOSFET (SemiHow)
HFH19N60 OCT 2009 HFH19N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 18.5 A FEATURES ‰ Originative New Design ‰ Superior Avalan.

HFH20N50 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
Shantou Huashan Electronic Devices Co.,Ltd. HFH20N50 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel e.

HFH6N90 - N-Channel MOSFET (SemiHow)
HFH6N90 Mar 2010 HFH6N90 900V N-Channel MOSFET BVDSS = 900 V RDS(on) typ = 1.95 Ω ID = 6.0 A FEATURES  Originative New Design  Superior Avalanch.

HFH7N60 - N-Channel Enhancement Mode Field Effect Transistor (HUASHAN ELECTRONIC)
Shantou Huashan Electronic Devices Co.,Ltd. HFH7N60 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel en.

HFH7N80 - N-Channel MOSFET (SemiHow)
HFH7N80 Mar 2010 HFH7N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ = 1.55 ȍ ID = 7.0 A FEATURES ‰ Originative New Design ‰ Superior Avalanch.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts