HFH7N60

N-Channel Enhancement Mode Field Effect Transistor

HUASHAN ELECTRONIC

HFH7N60 Features

* 7A, 600V(See Note), RDS(on)

HFH7N60 General Description

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche .

HFH7N60 Datasheet (612.70 KB)

HFH7N60 Datasheet Preview — Preview of HFH7N60 PDF

Datasheet Details

Part number:

HFH7N60

Manufacturer:

HUASHAN ELECTRONIC

File Size:

612.70 KB

Description:

N-channel enhancement mode field effect transistor.

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HFH7N60 N-Channel Enhancement Mode Field Effect Transistor HUASHAN ELECTRONIC

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HFH7N60 Features

HFH7N60 General Description

Datasheet Details

File Size:

Description:

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