HFH7N80
SemiHow
254.56kb
N-channel mosfet.
TAGS
📁 Related Datasheet
HFH7N60 - N-Channel Enhancement Mode Field Effect Transistor
(HUASHAN ELECTRONIC)
Shantou Huashan Electronic Devices Co.,Ltd.
HFH7N60
N-Channel Enhancement Mode Field Effect Transistor
█ General Description
These are N-Channel en.
HFH10N80 - N-Channel MOSFET
(SemiHow)
HFH10N80
Dec 2005
HFH10N80
800V N-Channel MOSFET
BVDSS = 800 V RDS(on) typ = 0.92 ȍ ID = 10 A
FEATURES
Originative New Design Superior Avalanc.
HFH10N90Z - N-Channel MOSFET
(SemiHow)
HFH10N90Z_HFA10N90Z
Oct 2016
HFH10N90Z / HFA10N90Z
900V N-Channel MOSFET
Features
Superior Avalanche Rugged Technology Robust Gate Oxide Techno.
HFH11N90 - N-Channel MOSFET
(SemiHow)
HFH11N90
Dec 2005
HFH11N90
900V N-Channel MOSFET
BVDSS = 900 V RDS(on) typ ȍ ID = 11 A
FEATURES
Originative New Design Superior Avalanc.
HFH12N60 - N-Channel Enhancement Mode Field Effect Transistor
(HUASHAN ELECTRONIC)
Shantou Huashan Electronic Devices Co.,Ltd.
HFH12N60
N-Channel Enhancement Mode Field Effect Transistor
█ General Description
These are N-Channel e.
HFH13N80 - N-Channel MOSFET
(SemiHow)
HFH13N80
Dec 2005
HFH13N80
800V N-Channel MOSFET
BVDSS = 800 V RDS(on) typ = 0.77 Ω ID = 12.6 A
FEATURES
Originative New Design Superior Avala.
HFH18N50S - N-Channel MOSFET
(SemiHow)
HFH18N50S
Nov 2009
HFH18N50S
500V N-Channel MOSFET
BVDSS = 500 V RDS(on) typ = 0.220ȍ ID = 19 A
FEATURES
Originative New Design Superior Avala.
HFH19N60 - N-Channel MOSFET
(SemiHow)
HFH19N60
OCT 2009
HFH19N60
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ ȍ ID = 18.5 A
FEATURES
Originative New Design Superior Avalan.
HFH20N50 - N-Channel Enhancement Mode Field Effect Transistor
(HUASHAN ELECTRONIC)
Shantou Huashan Electronic Devices Co.,Ltd.
HFH20N50
N-Channel Enhancement Mode Field Effect Transistor
█ General Description
These are N-Channel e.
HFH6N90 - N-Channel MOSFET
(SemiHow)
HFH6N90
Mar 2010
HFH6N90
900V N-Channel MOSFET
BVDSS = 900 V RDS(on) typ = 1.95 Ω ID = 6.0 A
FEATURES
Originative New Design Superior Avalanch.
