HFH9N90

N-Channel Enhancement Mode Field Effect Transistor

HUASHAN ELECTRONIC

HFH9N90 Features

* 9A, 900V(See Note), RDS(on)

HFH9N90 General Description

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche .

HFH9N90 Datasheet (677.68 KB)

HFH9N90 Datasheet Preview — Preview of HFH9N90 PDF

Datasheet Details

Part number:

HFH9N90

Manufacturer:

HUASHAN ELECTRONIC

File Size:

677.68 KB

Description:

N-channel enhancement mode field effect transistor.

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HFH9N90 N-Channel Enhancement Mode Field Effect Transistor HUASHAN ELECTRONIC

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HFH9N90 Features

HFH9N90 General Description

Datasheet Details

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Description:

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