HFH12N60 N-Channel Enhancement Mode Field Effect Transistor

HUASHAN ELECTRONIC

Description

Shantou Huashan Electronic Devices Co.,Ltd.HFH12N60 N-Channel Enhancement Mode Field Effect Transistor * General .
These are N-Channel enhancement mode silicon gate power field effect transistors.

📥 Download Datasheet

HFH12N60 Datasheet Preview — Preview of HFH12N60 PDF

Datasheet Specifications

Part number: HFH12N60
Manufacturer: HUASHAN ELECTRONIC
File Size: 604.75 KB
Datasheet: HFH12N60-HUASHANELECTRONIC.pdf
Description: N-Channel Enhancement Mode Field Effect Transistor

Features

* 12A, 600V(See Note), RDS(on)

HFH12N60 Distributors

📁 Related Datasheet

HFH10N80 HFH10N90Z HFH11N90 HFH13N80 HFH18N50S HFH19N60

📌 All Tags

HFH12N60 N-Channel Enhancement Mode Field Effect Transistor HUASHAN ELECTRONIC

HUASHAN ELECTRONIC HFH12N60-like datasheet

HFH20N50

HFH7N60

HFH9N90