Part number:
HFH12N60
Manufacturer:
HUASHAN ELECTRONIC
File Size:
604.75 KB
Description:
N-channel enhancement mode field effect transistor.
HFH12N60-HUASHANELECTRONIC.pdf
Datasheet Details
These are N-Channel enhancement mode silicon gate power field effect transistors.
They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche
HFH12N60 Features
* 12A, 600V(See Note), RDS(on)
HFH12N60-HUASHANELECTRONIC.pdf
Datasheet Details
HFH12N60
HUASHAN ELECTRONIC
604.75 KB
N-channel enhancement mode field effect transistor.
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