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HFH12N60 Datasheet - HUASHAN ELECTRONIC

HFH12N60 N-Channel Enhancement Mode Field Effect Transistor

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche .

HFH12N60 Features

* 12A, 600V(See Note), RDS(on)

HFH12N60-HUASHANELECTRONIC.pdf

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Datasheet Details

Part number:

HFH12N60

Manufacturer:

HUASHAN ELECTRONIC

File Size:

604.75 KB

Description:

N-channel enhancement mode field effect transistor.

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HFH12N60 HFH12N60 N-Channel Enhancement Mode Field Effect Transistor HUASHAN ELECTRONIC

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