✔ HFP840 Features
- Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics U
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HFP840
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SemiHow
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📄 Datasheet
Description:
N-channel mosfet.
HFP80N75 - N-Channel Enhancement Mode Field Effect Transistor
(HUASHAN ELECTRONIC)
Shantou Huashan Electronic Devices Co.,Ltd.
HFP80N75
N-Channel Enhancement Mode Field Effect Transistor
█ Applications
• Servo motor control. • Pow.
HFP830 - N-Channel MOSFET
(SemiHow)
HFP830
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HFP830
500V N-Channel MOSFET
BVDSS = 500 V RDS(on) typ ȍ ID = 4.5 A
FEATURES
Originative New Design Superior Avalanche .
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(SemiHow)
HFP8N60S
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600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ ȍ ID = 7.5 A
FEATURES
Originative New Design Superior Avalan.
HFP8N60U - N-Channel MOSFET
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HFP8N60U
HFP8N60U
600V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Ver.
HFP8N65S - N-Channel MOSFET
(SemiHow)
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HFP8N65S
650V N-Channel MOSFET
BVDSS = 650 V RDS(on) typ ȍ ID = 7.2 A
FEATURES
Originative New Design Superior Avalan.
HFP8N65U - N-Channel MOSFET
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HFP8N65U
650V N-Channel MOSFET
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Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Ver.
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HFP8N70U
HFP8N70U
700V N-Channel MOSFET
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Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Ver.
HFP10N60 - N-Channel MOSFET
(SemiHow)
HFP10N60
HFP10N60
600V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Ver.
HFP10N60S - N-Channel MOSFET
(SemiHow)
HFP10N60S
Nov 2007
HFP10N60S
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ = 0.67 Ω ID = 9.5 A
FEATURES
q Originative New Design q Superior Aval.
HFP10N60U - N-Channel MOSFET
(SemiHow)
HFP10N60U
HFP10N60U
600V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology V.
