HFP8N70U - N-Channel MOSFET
HFP8N70U Features
* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.3 ȍ 7S #9GS=10V 100% Avalanche Test
