SKM200GBD123D IGBT

Semikron

Description

Absolute Maximum Ratings Symbol Conditions 1) VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/8.

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Datasheet Specifications

Part number: SKM200GBD123D
Manufacturer: Semikron
File Size: 58.89 KB
Datasheet: SKM200GBD123D-Semikron.pdf
Description: IGBT

Features

* MOS input (voltage controlled)
* N channel, Homogeneous Si
* Low inductance case
* Very low tail current with low temperature dependence
* High short circuit capability, self limiting to 6
* Icnom
* Latch-up free
* Fast & soft inverse CAL

Applications

* Switching (not for linear use)
* Resonant inverters 1) Tcase = 25 °C, unless otherwise specified 2) IF =
* IC, VR = 600 V,
* diF/dt = 1500 A/µs, VGE = 0 V 3) Use VGEoff = -5 -15 V 5) See fig. 2 + 3; RGoff = 5,6 Ω 6) Series diodes have the data of the inverse diode

SKM200GBD123D Distributors

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SKM200GBD123D IGBT Semikron

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