* MOS input (voltage controlled)
* N channel, Homogeneous Si
* Low inductance case
* Very low tail current with low temperature dependence
* High short circuit capability, self limiting to 6
* Icnom
* Latch-up free
* Fast & soft inverse CAL
SKM200GBD123D1S Datasheet (3.36 MB)
SKM200GBD123D1S
Semikron
3.36 MB
Igbt.
Absolute Maximum Ratings
Symbol Conditions 1)
VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate
RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/8.
📁 Related Datasheet
SKM200GBD123D IGBT (Semikron)
SKM200GBD126D IGBT (Semikron)
SKM200GB063D IGBT (Semikron International)
SKM200GB123D IGBT (Semikron)
SKM200GB123D1 IGBT (Semikron)
SKM200GB124 IGBT (ETC)
SKM200GB124D IGBT (ETC)
SKM200GB125D IGBT (Semikron International)
SKM200GB126D IGBT (Semikron International)
SKM200GB128D SPT IGBT (Semikron)
