SKM200GBD123D1S Datasheet - Semikron

SKM200GBD123D1S IGBT

Absolute Maximum Ratings Symbol Conditions 1) VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Diodes IF= IC IFM= ICM Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms Values 1200 1200 200 / 180 400 / 360 ± 20 1380 40 . . .+150 (125) 2 500 7) Class F 40/125/56 Inverse D. 9) Series 6) 25 / 15 260 / 180 50 / 30 600 / 400 Units V V A A V W .

SKM200GBD123D1S Features

* MOS input (voltage controlled)

* N channel, Homogeneous Si

* Low inductance case

* Very low tail current with low temperature dependence

* High short circuit capability, self limiting to 6

* Icnom

* Latch-up free

* Fast & soft inverse CAL

SKM200GBD123D1S Datasheet (3.36 MB)