SEMIX353GD176HDC IGBT

Semikron International

SEMIX353GD176HDC Description

SEMiX353GD176HDc Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 1000 V VGE ≤ 20 V VCES ≤ 1700 V VGES tpsc Tj Inverse dio.

SEMIX353GD176HDC Features

* Homogeneous Si
* Trench = Trenchgate technology
* VCE(sat) with positive temperature coefficient

SEMIX353GD176HDC Applications

* br>
* AC inverter drives
* UPS
* Electronic welders Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) per IGBT IC = 225 A VGE = 15 V chiplevel Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C VGE = 15 V VG

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Datasheet Details

Part number: SEMIX353GD176HDC
Manufacturer: Semikron International
File Size: 400.01 KB
Datasheet: SEMIX353GD176HDC_SemikronInternational.pdf
Description: IGBT

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IGBT Semikron International

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