LH532600 Datasheet, Mrom, Sharp Electrionic Components

LH532600 Features

• Mrom
• 262,144 words × 8 bit organization (Byte mode) 131,072 words × 16 bit organization (Word mode)
• Access time: 100 ns (MAX.)
• Static operation
• TTL co

PDF File Details

Part number:

LH532600

Manufacturer:

Sharp Electrionic Components

File Size:

71.32kb

Download:

📄 Datasheet

Description:

Cmos 2m (256k x 8/128k x 16) mrom. The LH532600 is a 2M-bit mask-programmable ROM organized as 262,144 × 8 bits (Byte mode) or 131,072 × 16 bits (Word mode) that can be

TAGS

LH532600

Sharp Electrionic Components

📁 Related Datasheet

LH532000B - CMOS 2M (256K x 8/128K x 16) MROM (Sharp Electrionic Components)
LH532000B FEATURES • 262,144 words × 8 bit organization (Byte mode) 131,072 words × 16 bit organization (Word mode) • BYTE input pin selects bit confi.

LH532000B-1 - CMOS 2M (256K x 8/128K x 16) MROM (Sharp Electrionic Components)
LH532000B-1 FEATURES • 262,144 words × 8 bit organization (Byte mode) 131,072 words × 16 bit organization (Word mode) • Access time: 120 ns (MAX.) • P.

LH532048 - CMOS 2M (128K x 16) MROM (Sharp Electrionic Components)
LH532048 FEATURES • 131,072 words × 16 bit organization • Access time: 100 ns (MAX.) • Static operation • TTL patible I/O • Three-state outputs • S.

LH532100B - CMOS 2M (256K x 8) MROM (Sharp Electrionic Components)
LH532100B FEATURES • 262,144 words × 8 bit organization • Access time: 150 ns (MAX.) • Low-power consumption: Operating: 275 mW (MAX.) Standby: 550 µW.

LH532100B-1 - CMOS 2M (256K x 8) MROM (Sharp Electrionic Components)
LH532100B-1 FEATURES • 262,144 words × 8 bit organization • Access time: 120 ns (MAX.) • Static operation • TTL patible I/O • Three-state outputs •.

LH5324000 - CMOS 24M (3M x 8) MROM (Sharp Electrionic Components)
LH5324000 FEATURES • 3,145,728 × 8 bit organization • Access time: 150 ns (MAX.) • Supply current: – Operating: 65 mA (MAX.) – Standby: 100 µA (MAX.) .

LH5324500 - CMOS 24M (3M x 8/1.5M x 16) MROM (Sharp Electrionic Components)
LH5324500 FEATURES • 3,145,728 words × 8 bit organization (Byte mode) 1,572,864 words × 16 bit organization (Word mode) • Access time: 150 ns (MAX.) •.

LH5324C00 - CMOS 24M (1.5M x 16) MROM (Sharp Electrionic Components)
LH5324C00 FEATURES • 1,572,864 × 16 bit organization • Access time: 120 ns (MAX.) • Supply current: – Operating: 80 mA (MAX.) – Standby: 100 µA (MAX.).

LH5324P00A - CMOS 24M (3M x 8/1.5M x 16) Mask-Programmable ROM (Sharp Electrionic Components)
PRELIMINARY LH5324P00A FEATURES • 3,145,728 words × 8 bit organization (Byte mode) 1,572,864 words × 16 bit organization (Word mode) • Access time: 1.

LH53259 - CMOS 256K (32K x 8) MROM (Sharp Electrionic Components)
LH53259 FEATURES • 32,768 words × 8 bit organization • Access time: 150 ns (MAX.) • Low-power consumption: Operating: 137.5 mW (MAX.) Standby: 550 µW .