BPX43 Datasheet, Phototransistor, Siemens Semiconductor Group

BPX43 Features

• Phototransistor q Especially suitable for applications from Bereich von 450 nm bis 1100 nm q Hohe Linearität q Hermetisch dichte Metallbauform (TO-18) mit Basisanschluβ, geeignet bis 125 °C q Gruppier

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BPX43

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Siemens Semiconductor Group

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📄 Datasheet

Description:

Npn-silizium-fototransistor silicon npn phototransistor. Betriebs- und Lagertemperatur Operating and storage temperature range Löttemperatur bei Tauchlötung Lötstelle ≥ 2 mm vom Gehäuse, Löt

BPX43 Application

• Applications from Bereich von 450 nm bis 1100 nm q Hohe Linearität q Hermetisch dichte Metallbauform (TO-18) mit Basisanschluβ, geeignet bis 125 °C

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BPX43

Siemens Semiconductor Group

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