N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology.
Fully protected by embedded protection functions.
+ V bb 3 Voltage source Overvoltage protection Current limit Gate protection
BTS410E2 Features
* Overload protection
* Current limitation
* Short circuit protection
* Thermal shutdown
* Overvoltage protection (including load dump)
* Fast demagnetization of inductive loads
* Reverse battery protection1)
* Undervoltage and overvolt
BTS410E2_SiemensSemiconductorGroup.pdf
Datasheet Details
BTS410E2
Siemens Semiconductor Group
168.99 KB
Smart highside power switch (overload protection current limitation short circuit protection thermal shutdown).
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