BTS412B2E3062A - Smart Highside Power Switch
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology.
Fully protected by embedded protection functions.
+ V bb 3 Voltage source Overvoltage protection Current limit Gate protection
BTS412B2E3062A Features
* Overload protection
* Current limitation
* Short circuit protection
* Thermal shutdown
* Overvoltage protection (including load dump)
* Fast demagnetization of inductive loads
* Reverse battery protection1)
* Undervoltage and overvolt
