HYB3116400BJ-60 3.3V 4M x 4-Bit Dynamic RAM

Siemens Semiconductor Group

HYB3116400BJ-60 Description

3.3V 4M x 4-Bit Dynamic RAM HYB3116400BJ/BT(L) -50/-60/-70 HYB3117400BJ/BT(L) -50/-60/-70 Advanced Information * * * 4 194 .
DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns).

HYB3116400BJ-60 Features

* include single + 3.3 V (± 0.3 V) power supply, direct interfacing with high-performance logic device families. The HYB3116400BTL parts have a very low power „sleep mode“ supported by Self Refresh. Ordering Information Type HYB 3117400BJ-50 HYB 3117400BJ-60 HYB 3117400BJ-70 HYB 3117400BT-50 HYB 31174

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Datasheet Details

Part number: HYB3116400BJ-60
Manufacturer: Siemens Semiconductor Group
File Size: 253.01 KB
Datasheet: HYB3116400BJ-60_SiemensSemiconductorGroup.pdf
Description: 3.3V 4M x 4-Bit Dynamic RAM

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3.3V 4-Bit Dynamic RAM Siemens Semiconductor Group

Siemens Semiconductor Group HYB3116400BJ-60-like datasheet

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HYB3116400BT-60 - 3.3V 4M x 4-Bit Dynamic RAM
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HYB3116400BTL-60 - 3.3V 4M x 4-Bit Dynamic RAM