HYB3116400BJ-70 3.3V 4M x 4-Bit Dynamic RAM

Siemens Semiconductor Group

Description

3.3V 4M x 4-Bit Dynamic RAM HYB3116400BJ/BT(L) -50/-60/-70 HYB3117400BJ/BT(L) -50/-60/-70 Advanced Information * * * 4 194 .
DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns).

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Datasheet Specifications

Part number: HYB3116400BJ-70
Manufacturer: Siemens Semiconductor Group
File Size: 253.01 KB
Datasheet: HYB3116400BJ-70_SiemensSemiconductorGroup.pdf
Description: 3.3V 4M x 4-Bit Dynamic RAM

Features

* include single + 3.3 V (± 0.3 V) power supply, direct interfacing with high-performance logic device families. The HYB3116400BTL parts have a very low power „sleep mode“ supported by Self Refresh. Ordering Information Type HYB 3117400BJ-50 HYB 3117400BJ-60 HYB 3117400BJ-70 HYB 3117400BT-50 HYB 31174

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HYB3116400BJ-70 3.3V 4-Bit Dynamic RAM Siemens Semiconductor Group

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