HYB3117405BJ-50 3.3V 4M x 4-Bit EDO-Dynamic RAM

Siemens Semiconductor Group

Description

3.3V 4M x 4-Bit EDO-Dynamic RAM HYB3116405BJ/BT(L) -50/-60/-70 HYB3117405BJ/BT(L) -50/-60/-70 Advanced Information * * * 4 .
DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns).

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Datasheet Specifications

Part number: HYB3117405BJ-50
Manufacturer: Siemens Semiconductor Group
File Size: 285.45 KB
Datasheet: HYB3117405BJ-50_SiemensSemiconductorGroup.pdf
Description: 3.3V 4M x 4-Bit EDO-Dynamic RAM

Features

* include single + 3.3 V (± 0.3 V) power supply, direct interfacing with high-performance logic device families. The HYB3116405BTL parts have a very low power „sleep mode“ supported by Self Refresh. Ordering Information Type HYB 3117405BJ-50 HYB 3117405BJ-60 HYB 3117405BJ-70 HYB 3117405BT-50 HYB 31174

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HYB3117405BJ-50 3.3V 4-Bit EDO-Dynamic RAM Siemens Semiconductor Group

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