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HYB3117405BT-60 - 3.3V 4M x 4-Bit EDO-Dynamic RAM

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HYB3117405BT-60 Product details

Description

DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) LP-DRAM (access time 50 ns) LP-DRAM (access time 60 ns) LP-DRAM (access time 70 ns) Semiconductor Group 2 HYB 3116(7)405BJ/BT(L) -50/-60/-70 3.3V 4Mx4-DRAM Vcc I/O1 I/O2 WE RAS N.C.A10 A0 A1 A2

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