HYB3117805BSJ-60 Datasheet - Siemens Semiconductor Group

HYB3117805BSJ-60 2M x 8-Bit Dynamic RAM 2k Refresh

5V 5V 50 ns EDO-DRAM 60 ns EDO-DRAM 3.3 V 50 ns EDO-DRAM 3.3 V 60 ns EDO-DRAM Pin Names and Configuration A0 - A10 A0 - A9 RAS OE I/O1 - I/O8 CAS WE Row Address Inputs Column Address Inputs Row Address Strobe Output Enable Data Input/Output Column Address Strobe Read/Write Input Power Supply + 5 .

2M × 8-Bit Dynamic RAM 2k Refresh (Hyper Page Mode-EDO) Advanced Information 2 097 152 words by 8-bit organization 0 to 70 °C operating temperature Hyper Page Mode-EDO-operation Performance: -50 -60 60 15 30 104 25 HYB 5117805/BSJ-50/-60 HYB 3117805/BSJ-50/-60 tRAC tCAC tAA tRC tHPC RAS access time CAS access time Access time from address Read/Write cycle time Hyper page mode (EDO) cycle time 50 13 25 84 20 ns ns ns ns ns Power dissipation:.

HYB3117805BSJ-60_SiemensSemiconductorGroup.pdf