Datasheet Details
Part number:
HYB314100BJ-60, HYB-314
Manufacturer:
Siemens Semiconductor Group
File Size:
1.13 MB
Description:
4m x 1-bit dynamic ram low power 4m x 1-bit dynamic ram.
Note:
This datasheet PDF includes multiple part numbers: HYB314100BJ-60, HYB-314.
Please refer to the document for exact specifications by model.
HYB314100BJ-60, HYB-314, 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM
3.3 V DRAM (access time 50 ns) 3.3 V DRAM (access time 60 ns) 3.3 V DRAM (access time 70 ns) 3.3 V Low Power DRAM (access time 50 ns) 3.3 V Low Power DRAM (access time 60 ns) 3.3 V Low Power DRAM (access time 70 ns) Semiconductor Group 2 HYB 314100BJ/BJL-50/-60/-70 3.3V 4M x 1 DRAM Pin Configur
4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM HYB 314100BJ/BJL -50/-60/-70 Advanced Information 4 194 304 words by 1-bit organization 0 to 70 ˚C operating temperature Fast Page Mode Operation Performance: -50 -60 60 15 30 110 40 -70 70 20 35 130 45 ns ns ns ns ns tRAC tCAC tAA tRC tPC RAS access time CAS access time Access time from address Read/Write cycle time Fast page mode cycle time 50 13 25 95 35 Single + 3.3 V (± 0.3 V ) s
HYB314100BJ-60 Features
* include single + 3.3 V (± 0.3 V) power supply, direct interfacing with high performance logic device families. Ordering Information Type HYB 314100BJ-50 HYB 314100BJ-60 HYB 314100BJ-70 HYB 314100BJL-50 HYB 314100BJL-60 HYB 314100BJL-70 Ordering Code Q67100-Q2035 Q67100-Q2037 Q67100-Q2039 on request
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