Datasheet Details
Part number:
HYB314171BJ-70, HYB-314
Manufacturer:
Siemens Semiconductor Group
File Size:
1.31 MB
Description:
3.3v 256 k x 16-bit dynamic ram 3.3v low power 256 k x 16-bit dynamic ram with self refresh.
Note:
This datasheet PDF includes multiple part numbers: HYB314171BJ-70, HYB-314.
Please refer to the document for exact specifications by model.
HYB314171BJ-70, HYB-314, 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh
3.3V 50ns 256 K x 16 DRAM 3.3V 60 ns 256 K x 16 DRAM 3.3V 70 ns 256 K x 16 DRAM 3.3V 50 ns 256 K x 16 DRAM 3.3V 60 ns 256 K x 16 DRAM 3.3V 70 ns 256 K x 16 DRAM Pin Names A0-A8 RAS UCAS, LCAS WE OE I/O1 * I/O16 Address Inputs Row Address Strobe Column Address Strobe Read/Write Input Output
3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh HYB 314171BJ-50/-60/-70 HYB 314171BJL-50/-60/-70 Preliminary Information 262 144 words by 16-bit organization 0 to 70 °C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version) 60 ns (-60 version) 70 ns (-70 version) CAS access time: 15ns (-50,-60 version) 20 ns (-70 version) Cycle time: 95 ns (-50 version) 110 ns (-60 version) 130 n
HYB314171BJ-70 Features
* include Self Refresh (LVersion), single + 3.3 V (± 0.3 V) power supply, direct interfacing with high performance logic device families. Semiconductor Group 1 7.96 HYB 314171BJ/BJL-50/-60/-70 3.3V 256 K x 16-DRAM Ordering Information Type HYB 314171BJ-50 HYB 314171BJ-60 HYB 314171BJ-70 HYB 31417
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