HYB3165400AT-50 Datasheet - Siemens Semiconductor Group

HYB3165400AT-50 16M x 4-Bit Dynamic RAM

DRAM (access time 40 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 40 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 40 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 40 ns) DRAM (access time 50 ns) DRAM (access time 60 ns).

16M x 4-Bit Dynamic RAM (4k & 8k Refresh) HYB 3164400AJ/AT(L) -40/-50/-60 HYB 3165400AJ/AT(L) -40/-50/-60 Advanced Information 16 777 216 words by 4-bit organization 0 to 70 °C operating temperature Fast Page Mode operation Performance: -40 tRAC tCAC tAA tRC tPC RAS access time CAS access time Access time from address Read/write cycle time Fast page mode cycle time 40 10 20 75 30 -50 50 13 25 90 35 -60 60 15 30 110 40 ns ns ns ns ns .

HYB3165400AT-50 Datasheet (246.74 KB)