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HYB3165400J-50 - 16M x 4-Bit Dynamic RAM

Datasheet Summary

Description

500 mil DRAM (access time 50 ns) 500 mil DRAM (access time 60 ns) 500 mil DRAM (access time 50 ns) 500 mil DRAM (access time 60 ns) 500 mil DRAM (access time 50 ns) 500 mil DRAM (access time 60 ns) 500 mil DRAM (access time 50 ns) 500 mil DRAM (access time 60 ns) Semiconductor Group 62 HYB 3164(

Features

  • tCPA tRAS 35 10.
  • 50.
  • 30.

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Datasheet Details

Part number HYB3165400J-50
Manufacturer Siemens Semiconductor Group
File Size 448.09 KB
Description 16M x 4-Bit Dynamic RAM
Datasheet download datasheet HYB3165400J-50 Datasheet
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16M x 4-Bit Dynamic RAM (4k & 8k Refresh) HYB 3164400J/T -50/-60 HYB 3165400J/T -50/-60 Preliminary Information • • • • • • • • • • • 16 777 216 words by 4-bit organization 0 to 70 ˚C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version) 60 ns (-60 version) Cycle time: 90 ns (-50 version) 110 ns (-60 version) CAS access time: 13 ns ( -50 version) 15 ns ( -60 version) Fast page mode cycle time 35 ns (-50 version) 40 ns (-60 version) Single + 3.3 V (± 0.3V) power supply Low power dissipation max. 396 active mW ( HYB 3164400J/T-50) max. 360 active mW ( HYB 3164400J/T-60) max. 504 active mW ( HYB 3165400J/T-50) max. 432 active mW ( HYB 3165400J/T-60) 7.
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