HYB3165400T-60 Datasheet - Siemens Semiconductor Group

HYB3165400T-60 16M x 4-Bit Dynamic RAM

500 mil DRAM (access time 50 ns) 500 mil DRAM (access time 60 ns) 500 mil DRAM (access time 50 ns) 500 mil DRAM (access time 60 ns) 500 mil DRAM (access time 50 ns) 500 mil DRAM (access time 60 ns) 500 mil DRAM (access time 50 ns) 500 mil DRAM (access time 60 ns) Semiconductor Group 62 HYB 3164(.

16M x 4-Bit Dynamic RAM (4k & 8k Refresh) HYB 3164400J/T -50/-60 HYB 3165400J/T -50/-60 Preliminary Information 16 777 216 words by 4-bit organization 0 to 70 ˚C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version) 60 ns (-60 version) Cycle time: 90 ns (-50 version) 110 ns (-60 version) CAS access time: 13 ns ( -50 version) 15 ns ( -60 version) Fast.

HYB3165400T-60 Features

* tCPA tRAS 35 10

* 50

* 30

HYB3165400T-60 Datasheet (448.09 KB)