Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector peak current Total power dissipation, TS = 115 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - soldering point Rth JA Rth J
Q62702-C2335 Features
* q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 847W, BC 848W, BC 849W, BC 850W (NPN) Type BC 856 AW BC 856 BW BC 857 AW BC 857 BW BC 857 CW BC 858 AW BC 858 BW BC 858 CW BC
Q62702-C2335_SiemensSemiconductorGroup.pdf
Datasheet Details
Q62702-C2335
Siemens Semiconductor Group
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Pnp silicon af transistors (for af input stages and driver applications high current gain low collector-emitter saturation voltage).
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