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HYB514800BJ

512kx8-Bit Dynamic RAM

HYB514800BJ Features

* , ICC4 and ICC6 depend on cycle rate. ICC1 , ICC4 depend on output loading. 4) An initial pause of 200 µs is required after power-up followed by 8 RAS cycles of which at least one cycle has to be a refresh cycle, before proper device operation is achieved. In case of using the internal refresh cou

HYB514800BJ General Description

DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 80 ns) Semiconductor Group 125 01.95 HYB 514800BJ -60/-70/-80 512k x 8 DRAM The HYB 514800BJ is the new generation dynamic RAM organized as 512 288 words by 8-bit. The HYB 514800BJ utilizes CMOS silicon gate process as well as.

HYB514800BJ Datasheet (211.28 KB)

Preview of HYB514800BJ PDF

Datasheet Details

Part number:

HYB514800BJ

Manufacturer:

Siemens

File Size:

211.28 KB

Description:

512kx8-bit dynamic ram.
512kx8-Bit Dynamic RAM HYB 514800BJ -60/-70/-80 Advanced Information

*

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* 512 288 words by 8-bit organization 0 to 70 ˚C o.

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HYB514800BJ 512kx8-Bit Dynamic RAM Siemens

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