HYB514800BJ 512kx8-Bit Dynamic RAM

Siemens

Description

512kx8-Bit Dynamic RAM HYB 514800BJ -60/-70/-80 Advanced Information * * * 512 288 words by 8-bit organization 0 to 70 ˚C o.
DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 80 ns) Semiconductor Group 125 01.

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Datasheet Specifications

Part number: HYB514800BJ
Manufacturer: Siemens
File Size: 211.28 KB
Datasheet: HYB514800BJ_SiemensSemiconductorGroup.pdf
Description: 512kx8-Bit Dynamic RAM

Features

* , ICC4 and ICC6 depend on cycle rate. ICC1 , ICC4 depend on output loading. 4) An initial pause of 200 µs is required after power-up followed by 8 RAS cycles of which at least one cycle has to be a refresh cycle, before proper device operation is achieved. In case of using the internal refresh cou

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HYB514800BJ 512kx8-Bit Dynamic RAM Siemens

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