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HYB3117800BSJ-60 - 2M x 8-Bit Dynamic RAM

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HYB3117800BSJ-60 Product details

Description

3.3V DRAM (access time 50 ns) 3.3V DRAM (access time 60 ns) 3.3V DRAM (access time 70 ns) VCC VSS N.C.Semiconductor Group 2 HYB 3117800BSJ-50/-60/-70 2M x 8-DRAM P-SOJ-28-3 (400mil) VCC I/O1 I/O2 I/O3 I/O4 WE RAS N.C.A10 A0 A1 A2 A3 VCC O 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VSS I/O8 I/O7 I/O6 I/O5 CAS OE A9 A8 A7 A6 A5 A4 VSS Pin Configuration Semiconductor Group 3 HYB 3117800BSJ-50/-60/-70 2M x 8-DRAM I/O1 I/O2 I/O8 WE CAS .& Data in

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