SFH415 - GaAs Infrared Emitters

Siemens Semiconductor Group

SFH415 Datasheet Preview — Preview of SFH415 PDF

Datasheet Details

Part number	SFH415
Manufacturer	Siemens Semiconductor Group
File Size	47.43 KB
Description	GaAs Infrared Emitters
Datasheet	SFH415_SiemensSemiconductorGroup.pdf

SFH415 Product details

Description

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, tp = 10 µs, D = 0 Surge current Verlustleistung Power dissipation Wärmewiderstand Thermal resistance Symbol Symbol Wert Value 55 + 100 100 5 100 3 165 450 Einheit Unit °C °C V mA A mW K/W Top; Tstg Tj VR IF IFSM Ptot RthJA Semiconductor Group 2 1997-11-01 SFH 415 SFH 416 Kennwerte (TA = 25 °C) Cha

Features

q GaAs infrared emitting diodes, fabricated in q q q q q im Schmelzepitaxieverfahren Gute Linearität (Ie = f [IF]) bei hohen Strömen Sehr hoher Wirkungsgrad Hohe Zuverlässigkeit Hohe Impulsbelastbarkeit SFH 415: Gehäusegleich mit SFH 300, SFH 203 a liquid phase epitaxy process Good linearity (Ie = f [IF]) at high currents High efficiency High reliability High pulse handling capability SFH 415: Same package as SFH 300, SFH 203 Anwendungen q IR-Fernsteuerung von Fernseh- und Rundfunkgeräten, Vi.

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Other Datasheets by Siemens Semiconductor Group

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Published: May 20, 2005 |