SGT50T65FD1PN 650V FIELD STOP IGBT

Silan Microelectronics

Description

Silan Microelectronics SGT50T65FD1PN/P7/PS/PT_Datasheet 50A, 650V FIELD STOP IGBT C 2 .
1 SGT50T65FD1PN/P7/PS/PT using Field Stop IV IGBT technology, G offers the optimum performance for induction Heating, UPS, SMPS and PFC application.

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Datasheet Specifications

Part number: SGT50T65FD1PN
Manufacturer: Silan Microelectronics
File Size: 440.00 KB
Datasheet: SGT50T65FD1PN-SilanMicroelectronics.pdf
Description: 650V FIELD STOP IGBT

Features

* 50A, 650V, VCE(sat)(typ. )=2.2V@IC=50A
* Low conduction loss
* Fast switching
* High input impedance 12 3 TO-3PN 123 TO-247-3L 1 23 TO-247S-3L NOMENCLATURE IGBT series SGT 50 T 65 F D 1 PN Current, 50: 50A N : N Channel NE : N-channel planar gate with ESD T : Field Stop 3/4

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SGT50T65FD1PN 650V FIELD STOP IGBT Silan Microelectronics

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