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SGT50T65SDM1P7 650V FIELD STOP IGBT

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Description

Silan Microelectronics SGT50T65SDM1P7_Datasheet 50A, 650V FIELD STOP IGBT .
The SGT50T65SDM1P7 adopts Field Stop III IGBT technology, features low conduction loss and switching loss, positive temperature coefficient, easy para.

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Features

* low conduction loss and switching loss, positive temperature coefficient, easy parallel operation, etc. It is applicable to inverters, UPS, SMPS, and PFC. FEATURES
* 50A, 650V, VCE(sat)(typ. )=1.65V@IC=50A
* Low conduction loss
* Fast switching speed
* High breakdown voltage C 2 1 G

SGT50T65SDM1P7 Distributors

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SGT50T65SDM1P7 650V FIELD STOP IGBT Silan Microelectronics
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