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SVF7N65FQ

MOSFET

SVF7N65FQ Features

* 7A, 650V, RDS(on)(typ.)=1.1Ω@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Improved dv/dt capability TO-220F-3L TO-252-2L 12 3 12 3 TO-220FQ-3L TO-220-3L NOMENCLATURE SVFXNEXXCX Package information. Example: F:TO-220F; FQ: TO-220FQ;D:TO-252; MJ:TO-251J; K:T

SVF7N65FQ General Description

SVF7N65CF/D/MJ/K/S/FQ/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching .

SVF7N65FQ Datasheet (468.45 KB)

Preview of SVF7N65FQ PDF

Datasheet Details

Part number:

SVF7N65FQ

Manufacturer:

Silan Microelectronics

File Size:

468.45 KB

Description:

Mosfet.

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SVF7N65FQ MOSFET Silan Microelectronics

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