SVF830F, SVF830T Datasheet - Silan Microelectronics

SVF830F 500V N-CHANNEL MOSFET

SVD830T/F/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide supe.

SVF830F Features

* ∗ 4.5A,500V,RDS(on(typ)=1.3Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability ORDERING SPECIFICATIONS Part No. SVD830T SVD830F SVD830D SVD830DTR Package TO-220-3L TO-220F-3L TO-252-2L TO-252-2L Marking SVD830T SVD830F SVD830D SVD830D Material Pb free Pb free Pb

SVF830T-SilanMicroelectronics.pdf