SVF830FJ, SVF830MJ Datasheet - Silan Microelectronics

SVF830FJ 500V N-CHANNEL MOSFET

SVF830T/D/MJ/FJ/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switch.

SVF830FJ Features

* 5A,500V, RDS(on)(typ.)=1.2@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Improved dv/dt capability ORDERING INFORMATION Part No. SVF830T SVF830DTR SVF830MJ SVF830FJ SVF830F Package TO-220-3L TO-252-2L TO-251-3L TO-220FJ-3L TO-220F-3L Marking SVF830T SVF830D SVF83

SVF830MJ-SilanMicroelectronics.pdf